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| Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 0.15 2.8 - 0.3 + 0.2 1.5 - 0.05 + 0.25 0.65 0.15 2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 20 25 1.0 3 125 -55 to +125 V V A A C C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M6K Internal Connection Note) *1 : With a alumina PC board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 I Electrical Characteristics Ta = 25C 3C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 20 V IF = 1.0 A VR = 0 V, f = 1 MHz 180 Conditions Min Typ Max 200 0.45 Unit A V pF Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 400 MHz 0 to 0.1 0.1 to 0.3 0.4 0.2 0.8 Parameter Symbol Rating Unit 1.1 - 0.1 0.16 - 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25C 0.4 - 0.05 + 0.1 * Sealed in the Mini type 3-pin package * Allowing to rectify under (IF(AV) = 1 A) condition * Low forward rise voltage VF 0.95 1.9 0.2 2.9 - 0.05 1 + 0.2 0.95 3 1.45 I Features 1 MA3XD11 IF V F 10 Ta = 125C 1 1.0 Schottky Barrier Diodes (SBD) VF Ta IR VR Ta = 125C 10-1 10-2 Forward voltage VF (V) Forward current IF (A) Reverse current IR (A) 75C 10-1 10-2 10-3 10-4 10-5 10-6 25C - 20C 0.8 10-3 75C 0.6 10-4 25C 0.4 IF = 1 A 10-5 0.2 100 mA 10 mA 10-6 0 0.2 0.4 0.6 0.8 1 1.2 0 -40 10-7 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 100 VR = 20 V 10 10 V 5V 1 Reverse current IR (mA) 0.1 0.01 0.001 -40 0 40 80 120 160 200 Ambient temperature Ta (C) 2 |
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